This device is similar to an inverted MOSFET. The only difference is that in the device , the n-type channel is separated from the p-type substrate by a Silicondioxide layer which acts as an insulator of thickness 150 nm. But i am facing trouble in simulation since there is no interaction or continuity between insulator layer and n-type channel. How to mantain the continuity of the p type and n type channel when a silicondioxide layer is placed between them?
↧